The Characterization and Fabrication of Pyroelectric Infrared Sensor and Application of Thermal Image Array
نویسندگان
چکیده
The pyroelectric infrared (PIR) sensor with the lead-titanate (PbTiO3) thin film has been successfully fabricated. A RF planar magnetron sputter was used to deposit PbTiO3 thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 20.8 μc/cm and coercive electric field Ec = 79.365 kV/cm. The pyroelectric coefficient of 1.09 × 10 C/m K at 50 °C was measured as a function of temperature. In addition, the fabricated PIR sensor properties is RV = 600 (VW) when chopper frequency is 0.3 Hz. D* = 7.3 × 10 cm Hz W for a modulation frequency of 0.5 Hz. In this experiment, the 4 × 4 array for PIR sensor is also constructed and tested.
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تاریخ انتشار 2004